absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -4.5 i d @ v gs = -12v, t c = 100c continuous drain current -3.0 i dm pulsed drain current ? -18 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 157 mj i ar avalanche current ? -4.5 a e ar repetitive avalanche energy ? 2.5 mj dv/dt p eak diode recovery dv/dt ? -25 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s ) weight 0.98 ( typical ) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhf597230 power mosfet thru-hole (to-39) 06/18/02 www.irf.com 1 200v, p-channel technology product summary part number radiation level r ds(on) i d irhf597230 100k rads (si) 0.54 ? -4.5a irhf593230 300k rads (si) 0.54 ? -4.5a features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight for footnotes refer to the last page t0-39 pd - 94450
irhf597230 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.21 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.54 ? v gs = -12v, i d = -3.0a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 3.6 ? ? s ( )v ds > -15v, i ds = -3.0a ? i dss zero gate voltage drain current ? ? -10 v ds = -160v ,v gs =0v ? ? -25 v ds = -160v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 40 v gs = -12v, i d = -4.5a q gs gate-to-source charge ? ? 8.5 nc v ds = -100v q gd gate-to-drain (?miller?) charge ? ? 15 t d (on) turn-on delay time ? ? 25 v dd = -100v, i d = -4.5a, t r rise time ? ? 30 v gs =-12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 50 t f fall time ? ? 120 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in from package) to source lead(6mm/0.25in from packge)with source wire internally bonded from source pin to drain pad c iss input capacitance ? 1340 ? v gs = 0v, v ds = -25v c oss output capacitance ? 190 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 20 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? ? 175 typical socket mount c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? -4.5 i sm pulse source current (body diode) ? ? ? -18 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -4.5a, v gs = 0v ? t rr reverse recovery time ? ? 200 ns t j = 25c, i f =-4.5a, di/dt -100a/ s q rr reverse recovery charge ? ? 1.2 cv dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
www.irf.com 3 pre-irradiation irhf597230 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 ? -200 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds =-160v, v gs =0v r ds(on) static drain-to-source ? ? 0.505 ? 0.505 ? v gs = -12v, i d =-3.0a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.54 ? 0.54 ? v gs = -12v, i d =-3.0a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhf597230 2. part number irhf593230 v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -4.5a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. single event effect, safe operating area for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.3 285 36.8 - 200 - 200 - 200 - 200 -75 i 59.9 345 32.7 - 200 - 200 - 200 - 50 ? au 82.3 357 28.5 - 200 - 200 - 200 - 35 ? -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds br i au
irhf597230 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) -3.7v 20s pulse width tj = 25c vgs top -15v -12v -7.0v -5.0v -4.5v -4.3v -4.0v bottom -3.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) -3.7v 20s pulse width tj = 150c vgs top -15v -12v -7.0v -5.0v -4.5v -4.3v -4.0v bottom -3.7v 1 10 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -4.5a
www.irf.com 5 pre-irradiation irhf597230 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.5 1.5 2.5 3.5 4.5 5.5 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 400 800 1200 1600 2000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -4.5a v = -40v ds v = -100v ds v = -160v ds 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s
irhf597230 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation irhf597230 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge -12 v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + - 25 50 75 100 125 150 0 50 100 150 200 250 300 350 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -2.0a -2.8a -4.5a
irhf597230 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 50v, starting t j = 25c, l=15.5 mh peak i l = -4.5a, v gs = -12v ? i sd - 4.5a, di/dt - 360a/ s, v dd - 200v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/02 case outline and dimensions ? to-205af (modified to-39) legend 1- source 2- gate 3- drain
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